Contents
Preface Page vii
Acknowledgements ix
Part One Devices 1
1 Review of semiconductor materials and physics 3
1.1 Executive summary 3
1.2 Semiconductor materials 4
1.3 Types of solids 5
1.4 Crystal structure 5
1.5 Crystal directions and planes 6
1.6 Atomic bonding 8
1.7 Atomic physics 9
1.8 The de Broglie relation 11
1.9 Quantum mechanics 12
1.10 Statistical mechanics 16
1.11 Electrons in a semiconductor 16
1.12 The Kronig–Penney model 16
1.13 Semiconductors in equilibrium 18
1.14 Direct and indirect semiconductors 20
1.15 Recombination and radiation in semiconductors 25
1.16 Carrier transport in semiconductors 29
1.17 p–n junction 30
1.18 Schottky diode 34
1.19 Heterostructures 35
1.20 Silicon–germanium heterostructures 40
1.21 Problems 43
References 45
2 Electronic devices 46
2.1 Executive summary 46
2.2 MESFET 46
2.3 High electron mobility transistor 67
2.4 Radio Frequency MOSFETs 95
2.5 Bipolar and hetero-bipolar transistors 115
2.6 Problems 156
References 158
3 Optimisation and parameter extraction of circuit models 163
3.1 Executive summary 163
3.2 Optimisation of device models 163
3.3 Simulated annealing 164
3.4 Neural networks applied to modelling 168
3.5 Optimisation of neural networks by the genetic algorithm 180
3.6 Structured genetic algorithm 181
3.7 Semi-analytical device parameter extraction 184
3.8 Basic expressions for small-signal parameter extraction 203
3.9 Small-signal model of the collector-up (inverted) HBT 212
3.10 Problems 214
References 218
4 Optoelectronics 221
4.1 Executive summary 221
4.2 Optical sources 221
4.3 Photodetectors 261
4.4 Problems 284
References 285
Part Two Circuits 289
5 Building blocks for high-speed analogue circuits 291
5.1 Executive summary 291
5.2 Basic relations for two-port networks 291
5.3 Noise in two-ports 306
5.4 Transistor amplifiers 313
5.5 Oscillators 383
5.6 Mixers 396
5.7 Baluns, unbals and hybrids 412
5.8 Problems 419
References 421
Index 423
High-Speed Electronics and Optoelectronics(原版非扫描): High-Speed Electronics and Optoelectronics.pdf
