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Computational Electromagnetics --Dragica Vasileska and Stephen M. Goodnick: Computational Electromagnetics.rar

 

Computational Electromagnetics --Dragica Vasileska and Stephen M. Goodnick:
Computational Electromagnetics --Dragica Vasileska and Stephen M. Goodnick

Copyright ©2006 by Morgan & Claypool
All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in
any form or by any means—electronic, mechanical, photocopy, recording, or any other except for brief quotations
in printed reviews, without the prior permission of the publisher.
Computational Electronics
Dragica Vasileska and Stephen M. Goodnick
www.morganclaypool.com
1598290568 paperback Vasileska/Goodnick
1598290576 ebook Vasileska /Goodnick
DOI 10.2200/S00026ED1V01Y200605CEM006
A Publication in the Morgan & Claypool Publishers series
SYNTHESIS LECTURES ON COMPUTATIONAL ELECTROMAGNETICS
Lecture #6
Editor: Constantine A. Balanis, Arizona State University
Series ISSN Synthesis Lectures on Computational Electromagnetics
Print 1932-1252 Electronic 1932-1716
First Edition
10 9 8 7 6 5 4 3 2 1
Printed in the United States of America
ABSTRACT
Computational Electronics is devoted to state of the art numerical techniques and physical models
used in the simulation of semiconductor devices from a semi-classical perspective. Computational
Electronics, as a part of the general Technology Computer Aided Design (TCAD) field,
has become increasingly important as the cost of semiconductor manufacturing has grown
exponentially, with a concurrent need to reduce the time from design to manufacture. The
motivation for this volume is the need within the modeling and simulation community for a
comprehensive text which spans basic drift-diffusion modeling, through energy balance and
hydrodynamic models, and finally particle based simulation. One unique feature of this book
is a specific focus on numerical examples, particularly the use of commercially available software
in the TCAD community. The concept for this book originated from a first year graduate
course on Computational Electronics, taught nowfor several years, in the Electrical Engineering
Department at Arizona State University. Numerous exercises and projects were derived from
this course and have been included. The prerequisite knowledge is a fundamental understanding
of basic semiconductor physics, the physical models for various device technologies such as pn
diodes, bipolar junction transistors, and field effect transistors.
KEYWORDS
semiconductor device simulation, semiconductor transport, computational science and engineering,
integrated circuit technology, technology computer aided design
Contents
1. Introduction to Computational Electronics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2. Semiconductor Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Semiconductor Bandstructure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Simplified Band Structure Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3 Carrier Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.4 Effective Mass in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.5 Semiclassical Transport Theory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
2.5.1 Approximations Made for the Distribution Function . . . . . . . . . . . . . . . . 17
2.6 Boltzmann Transport Equation (BTE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.7 Scattering Processes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.8 Relaxation-Time Approximation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
2.9 Solving the BTE in the Relaxation-Time Approximation. . . . . . . . . . . . . . . . . . . .25
3. TheDrift–Diffusion Equations and TheirNumerical Solution . . . . . . . . . . . . . . . . . .33
3.1 Drift–Diffusion Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.1.1 Physical Limitations on Numerical Drift–Diffusion Schemes . . . . . . . .35
3.1.2 Steady-State Solution of Bipolar Semiconductor Equations . . . . . . . . . 37
3.1.3 Normalization and Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.1.4 Gummel’s Iteration Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
3.1.5 Newton’s Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.1.6 Generation and Recombination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
3.1.7 Time-Dependent Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
3.1.8 Scharfetter–Gummel Approximation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48
3.1.9 Extension of the Validity of the Drift–Diffusion Model . . . . . . . . . . . . . 50
4. Hydrodynamic Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
4.1 Extensions of the Drift-Diffusion Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
4.2 Stratton’s Approach . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
4.3 Balance Equations Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
4.3.1 Displaced Maxwellian Approximation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
vi CONTENTS
4.3.2 Momentum and Energy Relaxation Rates . . . . . . . . . . . . . . . . . . . . . . . . . . 68
4.3.3 Simplifications that Lead to the Drift-Diffusion Model . . . . . . . . . . . . . 70
4.4 Numerical Solution Schemes for the Hydrodynamic Equations . . . . . . . . . . . . . . 71
4.4.1 Von Neumann Stability Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
4.4.2 Lax Method. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
4.4.3 Other Varieties of Error . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
4.4.4 Second-Order Accuracy in Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
4.4.5 Fluid Dynamics with Shocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .79
5. Use of Commercially Available Device Simulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
5.1 The Need for Semiconductor Device Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
5.1.1 Importance of Semiconductor Device Simulators . . . . . . . . . . . . . . . . . . . 84
5.1.2 Key Elements of Physical Device Simulation . . . . . . . . . . . . . . . . . . . . . . . 84
5.1.3 Historical Development of the Physical
Device Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
5.2 Introduction to the Silvaco ATLAS Simulation Tool . . . . . . . . . . . . . . . . . . . . . . . 87
5.2.1 The ATLAS Syntax. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .88
5.2.2 Choice of the Numerical Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
5.2.3 Solutions Obtained . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
5.2.4 Advanced Solution Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93
5.2.5 Run-Time Output, Log Files, Solution Files,
and the Extract Statement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
5.3 Examples of Silvaco ATLAS Simulations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98
5.3.1 pn-Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
5.3.2 MOSFET Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
5.3.3 Simulation of BJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
5.3.4 Simulation of SOI Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
5.3.5 Gate Tunneling Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
5.3.6 Simulation of a MESFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
6. Particle-Based Device Simulation Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .139
6.1 Free-Flight Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
6.2 Final State After Scattering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
6.3 Ensemble Monte Carlo Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.4 Multicarrier Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
6.4.1 Pauli Exclusion Principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
6.4.2 Carrier–Carrier Interactions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150
CONTENTS vii
6.4.3 Band to Band Impact Ionization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .152
6.4.4 Full-Band Particle-Based Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . .153
6.5 Device Simulation Using Particles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
6.5.1 Monte Carlo Device Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
6.5.2 Direct Treatment of Interparticle Interaction . . . . . . . . . . . . . . . . . . . . . 166
Appendix A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Appendix B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .199
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