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High k Gate Dielectrics

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发表在  2008-12-15 10:53:10  | 显示全部楼层 | 阅读模式
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High k Gate Dielectrics (Materials Science and Engineering) (Hardcover)by Michel Houssa (Editor)


Hardcover: 614 pages
Publisher: Taylor & Francis; 1 edition (December 1, 2003)
Language: English
ISBN-10: 0750309067
ISBN-13: 978-0750309066
Product Dimensions: 9.4 x 6.8 x 1.5 inches

Review
High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and … newcomers to the field. The impressive work and methods … should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference source and overview to researchers with interest in high-k gate dielectrics.
-Susanne Stemmer, Materials Today, September 2004

High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and … newcomers to the field. The impressive work and methods … should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference source and overview to researchers with interest in high-k gate dielectrics.
-Susanne Stemmer, Materials Today, September 2004

Product Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community. High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.

[ 本帖最后由 drjiachen 于 2008-12-15 10:54 编辑 ]
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发表于 2008-12-15 11:47:58  | 显示全部楼层
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Contents
Foreword ix
SECTION 1: INTRODUCTION 1
Chapter 1.1 3
High-k gate dielectrics: why do we need them?
M. Houssa (University of Provence and IMEC) and
Marc Heyns (IMEC)
SECTION 2: DEPOSITION TECHNIQUES 15
Chapter 2.1 17
Atomic layer deposition
M. Ritala (University of Helsinki)
Chapter 2.2 65
Chemical vapour deposition
S.A. Campbell (University of Minnesota) and
R.C. Smith (Atofina Chemicals)
Chapter 2.3 89
Pulsed laser deposition of dielectrics
D. Blank, L. Doeswijk, K. Karakaya, G. Koster
and G. Rijnders (University of Twente)
SECTION 3: CHARACTERIZATION 123
Chapter 3.1 125
Oxygen diffusion
R.M.C. de Almeida (University of Porto Alegre) and
I.J.R. Baumvol (Universidade de C¸ axias do Sul)
Chapter 3.2 190
Defects in stacks of Si with nanometre thick high-k
dielectric layers: characterization and identification by
electron spin resonance
A Stesmans and V.V. Afanas’ev (University of Leuven)
Chapter 3.3 217
Band alignment at the interface of Si and metals with
high-permittivity insulating oxides
V.V. Afanas’ev and A. Stesmans (University of Leuven)
Chapter 3.4 251
Electrical characterization, modelling and simulation of
MOS structures with high-k gate stacks
J.L Autran, D Munteanu and M. Houssa
(University of Provence)
SECTION 4: THEORY 291
Chapter 4.1 293
Defects and defect-controlled behaviour in high-k materials:
a theoretical perspective
M. Stoneham, A. Shluger, A. Foster and M. Szymanski
(University College of London)
Chapter 4.2 325
Chemical bonding and electronic structure of high-k transition
metal dielectrics: applications to interfacial band offset
energies and electronically active defects
G. Lucovsky and J. Whitten (North Carolina State University)
Chapter 4.3 372
Electronic structure and band offsets of high dielectric
constant gate oxides
J. Robertson and P.W. Peacock (University of Cambridge)
Chapter 4.4 397
Reduction of the electron mobility in high-k MOS systems
caused by remote scattering with soft interfacial optical phonons
M.V. Fischetti, D.A. Neumayer and E. Cartier (IBM–T.J. Watson)
vi Contents
Chapter 4.5 431
Ab initio calculations of the structural, electronic and dynamical
properties of high-k dielectrics
G.M. Rignanese, X. Gonze (Universite´ Catholique de Louvain)
and A. Pasquarello (EPFL)
Chapter 4.6 467
Defect generation under electrical stress: experimental
characterization and modelling
M. Houssa (University of Provence and IMEC)
SECTION 5: TECHNOLOGICAL ASPECTS 497
Chapter 5.1 499
Device integration issues
E.W.A. Young (Sematech/Philips) and
V. Kaushik (Sematech/Motorola)
Chapter 5.2 524
Device architectures for the nano-CMOS era
S. Deleonibus (CEA-LETI)
Chapter 5.3 560
High-k transistor characteristics
J.C. Lee and K. Onishi (University of Texas at Austin)
Appendix – Properties of High-k Materials 597
Index 599
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发表于 2008-12-15 15:40:54  | 显示全部楼层
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High k Gate Dielectrics.part2
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[ 本帖最后由 drjiachen 于 2008-12-15 15:42 编辑 ]
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发表于 2008-12-15 15:41:14  | 显示全部楼层
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High k Gate Dielectrics.part1

High k Gate Dielectrics.part1.rar

4.77 MB, 下载次数: 60, 下载积分: 微元 3

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发表于 2008-12-16 00:59:27  | 显示全部楼层
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这个方面也是一点都不懂啊,:4de
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发表于 2008-12-16 10:16:55  | 显示全部楼层
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好书,谢谢楼主,不知楼主从哪弄到的
以己之微·网博天下:博览微网之术·创造成功之路!
发表于 2008-12-17 00:06:59  | 显示全部楼层
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這肯定是好資料囉
感謝樓主分享
加強學習中.....
以己之微·网博天下:博览微网之术·创造成功之路!
发表于 2008-12-19 16:28:38  | 显示全部楼层
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完全不知道是什么,下下来看看。。。
多谢
以己之微·网博天下:博览微网之术·创造成功之路!
发表于 2008-12-19 19:39:49  | 显示全部楼层
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Well ,it is a good book,how do you get that
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发表于 2008-12-21 13:38:42  | 显示全部楼层
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感謝樓主分享
...........................................
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